"Effect of SiO2 Buffer Layer Thickness on the Device Reliability of the Amorphous InGaZnO Pseudo-MOS Field Effect Transistor"
작성자
SEMATEC
작성일
2015-01-06 01:56
조회
1840
"Effect of SiO2 Buffer Layer Thickness on the Device Reliability of the Amorphous InGaZnO Pseudo-MOS Field Effect Transistor", 이세원, 황영현, 조원주, Journal of Korean Institute of Eletrical and Electronic Material Engineers, Vol. 25, No. 1, pp. 24-28, Jan 1, 2012.